한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권12호
  • /
  • Pages.982-987
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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PRAM을 위한 Ge-Se-Te 박막의 상변환 특성

Phase Change Characteristics of Ge-Se-Te Thin Film for PRAM

  • 신재호 (전남대학교 신화학소재공학과) ;
  • 김병철 (경남과학기술대학교 전자공학과) ;
  • 여종빈 (전남대학교 응용화학공학부, 촉매연구소) ;
  • 이현용 (전남대학교 응용화학공학부, 촉매연구소)
  • Shin, Jae-Ho (Department of Advanced Chemicals & Engineering, Chonnam National University) ;
  • Kim, Byung-Cheul (Department of Electronic Engineering, Gyeongnam National University of Science and Technology) ;
  • Yeo, Jong-Bin (School of Applied Chemical Engineering, Research Institute of Catalysis, Chonnam National University) ;
  • Lee, Hyun-Yong (School of Applied Chemical Engineering, Research Institute of Catalysis, Chonnam National University)
  • 투고 : 2011.08.08
  • 심사 : 2011.11.17
  • 발행 : 2011.12.01
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초록

In this study, $Ge_8Se_{(2+x)}Te_{(6-x)}$ thin film amorphous-to-crystalline phase-change rate was evaluated in using a nano-pulse scanner. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-31 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the Ge-Se-Te film is largely improved by adding Se.

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참고문헌

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