한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권12호
  • /
  • Pages.988-991
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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두 가지 타입의 CuPC FET 전극 구조에서의 전기적 특성

Electrical Properties of CuPc FET Using Two-type Electrode Structure

  • Lee, Won-Jae (Department of Electronic Engineering, Kyungwon University) ;
  • Lee, Ho-Shik (Department of Hospital Service and Biomedical Science, Dongshin University)
  • 투고 : 2011.11.04
  • 심사 : 2011.11.18
  • 발행 : 2011.12.01
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초록

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

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참고문헌

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