참고문헌
- D. K. Shaeffer and T. H. Lee, “A 1.5-V 1.5-GHz CMOS low-noise amplifier,” IEEE J. Solid-State Circuits, Vol.23, pp.745-759, May 1997. https://doi.org/10.1109/4.568846
- G. Knoblinger, “RF noise of deep-submicron MOSFETs: extraction and modeling,” in Proc. 28th Eur. Solid-State Device Research Conf. (ESSDERC), 1998, pp.460-462.
- A. J. Scholten, L. F. Tiemeier, R. Van Langevelde, R. J. Havens, A. T. A Zegers-van Duijnhoven, R. de Kort and D. B. M Klassen, “Compact modeling of noise for RF CMOS circuit design,” IEE Proc.-Circuit Device Syst., Vol.151, No.2, pp.167-174, Apr. 2004. https://doi.org/10.1049/ip-cds:20040373
- C. H. Chen and M. J. Deen, “Channel Noise Modeling of Deep Submicron MOSFETs,” IEEE Trans. Electron Devices, Vol.49, No.8, pp.1484-1487, August 2002. https://doi.org/10.1109/TED.2002.801229
- A. J. Scholten, H. J. Tromp, L. F. Tiemeijer, R. van Langevelde, R. J. Havens, P.W. H. de Vreede, R. F. M. Roes, P. H.Woerlee, A. H. Montree, and D. B. M. Klaassen, “Accurate thermal noise model for deep–submicron CMOS,” IEDM Tech. Dig., Dec. 1999, pp.155-158.
- K. Han, H. Shin, and K. Lee, “Analytical drain thermal noise current model valid for deep submicron MOSFETs,” IEEE Trans. Electron Devices, Vol.51, No.2, pp.261-269, Feb. 2004. https://doi.org/10.1109/TED.2003.821708
- J. Jeon, I. Song, I. M. Kang, Y. Yun, B.-G. Park, J. D. Lee, and H. Shin, “A new noise parameter model of short-channel MOSFETs,” in Proc. IEEE Radio Frequency Integrated Circuits(RFIC) Symposium, June 2007, pp.639-642.
- A. S. Roy and C. C. Enz, “Compact modeling of Thermal Noise in the MOS Transistor,” IEEE Trans. Electron Devices, Vol.52, No.4, pp.611-614, Apr. 2005. https://doi.org/10.1109/TED.2005.844735
- C. Enz, “An MOS Transistor Model for RF IC Design Valid in All Regions of Operation,” IEEE Trans. Microwave Theory and Techniques, Vol.50, No.1, pp.342-359, Jan. 2002. https://doi.org/10.1109/22.981286
- K. Han, G. Joon, S.-S. Song, J. Han, H. Shin, C.-K. Kim, and K. Lee, “Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier,” IEEE Jour. of Solid-State Circuits, Vol.40, No.3, pp.726-735, Mar. 2005. https://doi.org/10.1109/JSSC.2005.843637
- A. van der Ziel, Noise in Solid State Devices and Circuits, New York : Wiley, 1986.
- W. Jin, P.C.H. Chan, J. Lau, “A physical thermal noise model for SOI MOSFET,” IEEE Trans. Electron Devices, Vol.47, No.4, pp.768-773, Apr. 2000. https://doi.org/10.1109/16.830992
- J. Jeon, J. D. Lee, B.-G.. Park, and H. Shin, “An analytical channel thermal noise model for deepsubmicron MOSFETs with short channel effects,” Solid-State Electronics, Vol.51, No.7, pp.1034-1038, July 2007. https://doi.org/10.1016/j.sse.2007.05.004
- S. Wolf, Silicon Processing for the VLSI Era Volume 3 – The Submicron MOSFET, Lattice Press, 1995.
- M. J. Deen, C. H. Chen, S. Asgaran, G. A. Rezvani, J. Tao, and Y. Kiyota, “High -Frequency Noise of Modern MOSFETs : Compact Modeling and Measurement Issues,” IEEE Trans. Electron Devices, Vol.53, pp.2062-2081, Sep. 2006. https://doi.org/10.1109/TED.2006.880370
- J. Kim, J. Lee, I. Song, Y. Yun, J. D. Lee, B.-G. Park, and H. Shin, “Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method,” IEEE Trans. Electron Devices, Vol.55, No.10, pp.2779-2784, Dec. 2008. https://doi.org/10.1109/TED.2008.2003081
- H. Hillbrand and P. Russer, “An Efficient Method for Computer Aided Noise Analysis of Linear Amplifier Network,” IEEE Trans. Circuit Syst., Vol. CAS-23, pp.235-238, Apr. 1976. https://doi.org/10.1109/TCS.1976.1084200
- S. Asgaran, M. J. Deen, and C. H. Chen, “Analytical Modeling of MOSFETs Channel Noise and Noise Parameters,” IEEE Trans. Electron Devices, Vol.51, No.12, pp.2109-2114, Dec. 2004. https://doi.org/10.1109/TED.2004.838450
- Y. P. Tsividis, Operation and Modeling of the MOS Transistor, New York : McGraw-Hill, 1987.
피인용 문헌
- Design of CMOS Op Amps Using Adaptive Modeling of Transistor Parameters vol.12, pp.1, 2012, https://doi.org/10.5573/JSTS.2012.12.1.75