참고문헌
- R. N. Simons and K.B. Bhasin, “Analysis Optically Controlled Microwave /Millimeter-Wave Device Structures,” IEEE Trans. on Microwave Theory and Techniques, Vol. MTT-34, p. 1349, 1986. https://doi.org/10.1109/TMTT.1986.1133548
- J.M. Osterwalder and B.J. Rickett, “GaAs MESFET demodulates gigabit rates from GaAlAs injection laser,” Proceeding of the IEEE, Vol. 67, p. 966, 1979. https://doi.org/10.1109/PROC.1979.11368
- P. Chakrabarti, et al, “Switching Characteristics of an Optically Controlled GaAs-MESFET,” IEEE Trans. on Microwave Theory & Tech., Vol. MTT-42, pp. 365-375, 1994. https://doi.org/10.1109/22.277428
- V.K. Singh, S.N. Chattopadhyay and B.B. Pal, “Optically Controlled Characteristics in an Ion-Implanted Silicon MESFET,” Solid State Electronics, Vol. 29, pp. 707-711, 1986. https://doi.org/10.1016/0038-1101(86)90156-5
- S. Mishra, V.K. Singh and B.B. Pal, “Effect of Radiation and Surface Recombination on the Characteristics of an Ion-Implanted –GaAs MESFET,” IEEE Trans. Electron Devices, Vol. 37, pp.2-10, 1990. https://doi.org/10.1109/16.43794
- S.R. Saxena, R.B. Lohani, R.U. Khan and B.B. Pal, “Generalized dc model of GaAs optical field effect transistor considering ion implanted profile,” Optical Engineering, Vol. 37, No. 4, p.1343, 1998. https://doi.org/10.1117/1.601895
- C. Baack et al., “GaAs M.E.S.F.E.T.: A High-Speed Optical Detector,” Electronics Letters, Vol. 13, p.193, 1977.
- S. Bose, et al., “Cutoff frequency and optimum noise figure of GaAs optically controlled FET,” Microwave and Optical Technology Letters, Vol. 26, No. 5, p.279, 2000. https://doi.org/10.1002/1098-2760(20000905)26:5<279::AID-MOP1>3.0.CO;2-0
- R. Zulegg, “Radiation effects in GaAs FET devices,” Proceedings of the IEEE 77 (1989), p.389. https://doi.org/10.1109/5.24126
- H. Mizuno, “Microwave characteristics of an optically controlled GaAs MESFET,” IEEE Trans. on Microwave Theory & Tech., Vol. MTT 31, p. 596, 1983. https://doi.org/10.1109/TMTT.1983.1131551
- J. Graffeuil, et al, “Light induced effects in GaAs FETs,” Electronics Letters. Vol. 15, p. 439, 1979. https://doi.org/10.1049/el:19790315
- A.A.A. DeSalles, “Optical control of GaAs MESFET’s,” IEEE Trans. Microwave Theory & Tech., Vol. MTT-31, p. 812, 1983. https://doi.org/10.1109/TMTT.1983.1131611
- B.B. Pal and S.N. Chattopadhyay, “Time dependent analysis of an ion implanted GaAs OPFET,” IEEE Trans. Electron Devices, Vol. 42, p. 491, 1994. https://doi.org/10.1109/16.278500
- C. A. Liechti, “Performance of Dual-gate GaAs MESFET’s as Gain-Controlled Low Noise Amplifiers and High Speed Modulators,” IEEE Trans. on Microwave Theory and Techniques, Vol. MTT-23, No. 6, pp. 461-469, 1975. https://doi.org/10.1109/TMTT.1975.1128602
- G. Breglio, et al, “Two silicon optical modulators realizable with a fully compatible bipolar process,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4, p. 1003, 1998. https://doi.org/10.1109/2944.736098
- C.L. Schow, et al., “A 1-Gb/s monolithically integrated silicon nMOS Optical Receiver,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4, p.1035, 1998. https://doi.org/10.1109/2944.736109
- L. Forbes, et al, “A Model for the Channel Noise of MESFETs Including Hot Electron Effects,” Microelectronics Reliability, Vol. 39, pp. 1773-1786, 1999. https://doi.org/10.1016/S0026-2714(99)00184-5
- R.A. Minasian, “Optimum Design of a 4-Gbit/s GaAs MESFET Optical Preamplifier,” Journal of Lightwave Tech., Vol. LT-5, No.3, pp.373-379, 1987.
- K. Kanemoto, et al., “Dependence of ion implantation: Induced defects in substrate doping,” J. Appl. Phys., Vol. 89, pp.3156-3161, 2001. https://doi.org/10.1063/1.1337080
- K.L. Narayanan and M. Yamaguchi, “Phosphorous ion implantation in C60 for the photovoltaic applications,” J. Appl. Phys., Vol. 89, pp. 8331-8335, 2001. https://doi.org/10.1063/1.1374481
- S. N. Chattopadhyay, et al, “Optically controlled Silicon MESFET Modeling Considering Diffusion Process,” Journal of Semiconductor Technology and Science, Vol. 7, No. 3, pp. 196-208, 2007. https://doi.org/10.5573/JSTS.2007.7.3.196
- S. Bose, et al, “Optical Radiation and Temperature Dependent Microwave Performance of Optically Biased GaAs Metal-Semiconductor Field Effect Transistors,” Optical. Engineering. (SPIE), Vol. 41, No. 1, pp. 190-199, 2002 https://doi.org/10.1117/1.1418009
- P. Chakrabarti, et al, “An Analytical model of GaAs OPFET,” Solid State Electronics, vol. 39, no. 10, pp. 1481-1490, 1996. https://doi.org/10.1016/0038-1101(96)00061-5
- P. Chakrabarti, et al, “An Improved Model of Ion-Implanted GaAs OPFET,” IEEE Trans. on Electron Devices, Vol. 39, No. 9, pp.2050-2059, 1992. https://doi.org/10.1109/16.155877
- S.N. Chattopadhyay and B.B. Pal. “The effect of annealing on the Switching characteristics of an ion-implanted silicon MESFET,” IEEE Trans. on Electron Devices, Vol. ED-36, pp.920-929, 1989. https://doi.org/10.1109/16.299674
- S.N. Chattopadhyay and B.B. Pal, “Analytical modeling an Ion-implanted Silicon MESFET in Post-Anneal condition,” IEEE Trans. on Electron Devices, Vol. ED-36, pp.81-87, 1989. https://doi.org/10.1109/16.21182
- A.H. Khalid and A.A. Rezazadeh, “Fabrication and Characterization of Transparent-Gate Field Effect Transistors Using Indium Tin Oxide,” IEEE Proceedings – Optoelectronics, Vol. 143, No. 1, pp. 7-11, 1996. https://doi.org/10.1049/ip-opt:19960083
- T. Sugeta and Y. Mizushima, “High Speed Photoresponse Mechanism of a GaAs MESFET,” Japanese Journal of Appl. Physics, Vol. 19, No. 1, pp. L27-29, 1980. https://doi.org/10.1143/JJAP.19.L27
- K. Kanemoto, et.al, “Dependence of ion implantation: Induced defects on substrate doping,” J. Appl. Phys. Vol.89, pp.3156-3161, 2001. https://doi.org/10.1063/1.1337080
- K.L. Narayanan and M. Yamaguchi, “Phosphorous ion implantation in C60 for the photovoltaic applications,” J. Appl. Phys., Vol. 89, pp. 8331-8335, 2001. https://doi.org/10.1063/1.1374481
- H. Seidel, et al. “Anisotropic Etching of Crystalline in Alkaline Solutions,” J. Electrochemical Society, Vol. 137, No. 11, pp. 3626-3632, 1990. https://doi.org/10.1149/1.2086278
- M.J. Madou, “Fundamentals of Microfabrication, 2nd Ed.,” CRC Press, New York, 2002, p.212.
- R. Maboudian, R.T. Howe, “Critical Review: Adhesion in Surface Micromechanical Structures,” J. Vac. Sci. Technol. B, vol. 15 (1), p. 1, 1997. https://doi.org/10.1116/1.589247
- S. Sundararajan, B. Bhushan, “Static Friction and Surface roughness studies of Surface Micromachined Electrostatic Micromotors using an Atomic Force/Friction Force Microscope,” J. Vac. Sci. Technol. A, Vol. 19, pp.1777-1785, 2001. https://doi.org/10.1116/1.1353539
- F. Ericson, J. A. Schweitz, “Micromechanical Fracture Strength of Silicon,” J. Appl. Phys., Vol. 68, p.5840, 1990. https://doi.org/10.1063/1.346957
- T. Yi, C.J. Kim, “Measurement of Mechanical properties for MEMS materials,” Meas. Sci. Technol., Vol. 10, pp. 706-716, 1999. https://doi.org/10.1088/0957-0233/10/8/305
- S. Sundararajan, B. Bhushan, et.al, “Mechanical Property Measurements of Nanoscale Structures using an atomic Force Microscope,” Ultramicroscopy, Vol. 91, pp. 111-118, 2002. https://doi.org/10.1016/S0304-3991(02)00089-X
- F. J. Williams, C.M. Aldao, et al, “Why Si (100) Steps are Rougher After Etching,” Phy. Rev., B, Condens. Matter, Vol. 55, pp. 13829-13834, 1997. https://doi.org/10.1103/PhysRevB.55.13829
- T. Baum and D.J. Schiffrin, “AFM Study of Surface Finish Improvement by Ultrasound in the Anisotropic Etching of Si (100) in KOH for Micromaching Applications,” J. Micromechanics Microengineering, Vol. 7, pp. 338-342, 1997. https://doi.org/10.1088/0960-1317/7/4/010
- I. Zubel, et al, “Silicon Anisotropic etching in alkaline solutions II On the Influence of anisotropy on the smoothness of etched surfaces,” Journal “Sensors and Actuators A: Physical, Vol. 70, pp. 260-268, 1998. https://doi.org/10.1016/S0924-4247(98)00142-3
- M. Shikida, K. Sato, et al, “Differences in anisotropic etching properties of KOH and TMAH solutions,” Journal “Sensors and Actuators A: Physical,” Vol. 80, pp.179-188, 2000. https://doi.org/10.1016/S0924-4247(99)00264-2
- R. Holly and K. Hingerl, “Fabrication of silicon vertical taper structures using KOH anisotropic etching,” Microelectronics Engineering, 83, 1430-1433, 2006. https://doi.org/10.1016/j.mee.2006.01.078
- A. Tabe, A. Uchiyama, et.al in Proceedings of the 1st International Symposium on Semiconductors wafer bonding: Science and Technology, and Applications, U. Gosels, T, Abe, J. Haisma and M.A. Schmidt, Editors, PV 92-7, p 200, The Electrochemical Society Proceedings Series, NJ (1992).
- W.P. Maszara, B-L. Jiang et.al, “Role of Surface Morphology in Wafer Bonding,” J. Appl. Phys. Vol. 69, p.257, 1991. https://doi.org/10.1063/1.347760
- H. Angermann and Carola Klimn, “Wet-chemical treatment and electronic interface properties of silicon solar cell,” Central European Journal of Physics, Vol. 7, 2, pp.363-370, 2009. https://doi.org/10.2478/s11534-009-0055-3
- J.D. Hylton, A.R. Burgers and W.C. Sinke, “Alkaline etching of Reflectance reduction in multicrysttaline silicon solar cells,” Journal of the Electrochemical Society, Vol. 151, Issue 6, pp.G408-G427, 2004. https://doi.org/10.1149/1.1738137
- S.K. Ghandhi, “VLSI Fabrication Principles – Silicon and Gallium Arsenide, 2nd Ed.,” 1994, John Willey & Sons, Inc.
- D.K. Schroder, et al, “Free Carrier Absorption in Silicon,” IEEE Trans. On Electron Devices, Vol. ED-25, No. 2, pp. 254-261, 1978. https://doi.org/10.1109/T-ED.1978.19066
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