Journal of electromagnetic engineering and science

  • 제9권3호
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  • Pages.159-163
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  • 2009
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  • 2671-7255(pISSN)
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  • 2671-7263(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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High-Performance Q-Band MMIC Phase Shifters Using InGaAs PIN Diodes

  • Kim, Mun-Ho (Department of Electrical Engineering and Computer Science at Korea Advanced Institute of Science and Technology(KAIST)) ;
  • Yang, Jung-Gil (Department of Electrical Engineering and Computer Science at Korea Advanced Institute of Science and Technology(KAIST)) ;
  • Yang, Kyoung-Hoon (Department of Electrical Engineering and Computer Science at Korea Advanced Institute of Science and Technology(KAIST))
  • 발행 : 2009.09.30
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초록

This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors' knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.

키워드

참고문헌

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피인용 문헌

  1. p-i-n diode phase shifter in waveguide structure vol.57, pp.7, 2015, https://doi.org/10.1002/mop.29157