• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.625-629
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• 2003

Low loss and high power MMIC limiters with GaAs PM diode were designed and fabricated. The new epitaxial structure of GaAs PIN diode was proposed in order to increase the high power capability. 2 types of limiter circuits have been designed and the limiting powers have been measured. Results indicated that the limiting power was depended on the circuit topology. Limiting power levels of 2-stage limiters are measured 16 ㏈m and 22 ㏈m at 14 ㎓, respectively.

• Journal of electromagnetic engineering and science
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• v.9 no.3
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• pp.159-163
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• 2009

This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors' knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.441-443
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• 1995

A new optical-resistive voltage divider, which consists of light emitting diode, optic fiber, PIN-photo diode and a high qualify shielding resistive divider, whose total response time is 7.35 [ns], has been obtained. The optical to electrical signal converter was constructed with GaAsP series light emitting diode. The response characteristics have been verified by applying the Marx impulse voltage generator experimentally. Comparing with the performance of conventional resistive voltage divider, the characteristics of the proposed optical-resistive voltage divider are more excellent in step response and less sensitive to electromagnetic interference.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.9
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• pp.392-397
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• 2003

Reflection type phase shifter with Lange coupler is widely used as a circuit topology to obtain phase shift in broadband operation. The phase shift of 33.75$^{\circ}$ at this type is achieved by simultaneously turning on both 11.25$^{\circ}$ and 22.5$^{\circ}$ . In order to improve the phase accuracy of 33.75$^{\circ}$, this paper proposes the additional circuit which is composed of a GaAs PIN diode and a reactive load. By utilizing MMIC technology. Over the 2-6 GHz band, the measured result of phase difference between the previous circuit and the proposed circuit shows average 4.7$^{\circ}$ on the basis of 33.75$^{\circ}$. Insertion loss and return loss are invariant in comparison with the previous circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.319-320
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• 2007

We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 1996.06a
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• pp.27-31
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• 1996

In this paper, The SSPA(Solid State Power Amplifier) is 100 watts amplifier which is used with C-Band Satellite communication Up-Link frequency, 5.875 ∼6.425 GHz. SSPA requires more output power than is available from a single GaAs FET with result it is necessary to combine the output of many device. To achieve a high power, it is important to make a good N-way power divider which has a small different phase, good combining efficiency and high power handling capability. The reliability of Power GaAs FET decrease with increasing junction temperature, power amplifier in general dissipate amount of power. It is important to provide them with a heatsink and a temperature compensation circuit to dispose of the unwanted heat. To compensate temperature, Using PIN diode attenuator, it is enable to get a precision gain control. The output power of the SSPA is more than 100 watt with which the TWTA (Traveling-Wave Tube Amplifier) can be replaced. Each stage was measured by the Network analyzer PH8510C, Power meter Booton 42BD, The gain is more than 53 dB, flatness is less than 1.5 dB.