한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제21권10호
  • /
  • Pages.881-884
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  • 2008
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Effect of Thickness on Electrical Properties of PVDF-TrFE (51/49) Copolymer

  • Kim, Joo-Nam (School of Electrical and Computer Engineering, University of Seoul) ;
  • Jeon, Ho-Seung (School of Electrical and Computer Engineering, University of Seoul) ;
  • Han, Hui-Seong (School of Electrical and Computer Engineering, University of Seoul) ;
  • Im, Jong-Hyung (School of Electrical and Computer Engineering, University of Seoul) ;
  • Park, Byung-Eun (School of Electrical and Computer Engineering, University of Seoul) ;
  • Kim, Chul-Ju (School of Electrical and Computer Engineering, University of Seoul)
  • 발행 : 2008.10.01
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초록

In this study, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) in the composition from 51/49, was deposited on platinum for a metal-ferroelectric-metal structure. From XRD patterns, the 70 nm- and 140 nm-thick PVDF-TrFE films showed the intensity peak of near $20^{\circ}$ connected to a ferroelectric phase. Moreover, the thicker film indicated the higher intensity than thinner one. The difference of the remanent polarization (2Pr) at 0 V is decreased gradually from 10.19 to $5.7{\mu}C/cm^2$ as the thickness decrease from 140 to 70 nm. However, when the thickness decreased to 50 nm, the 2Pr rapidly drop to $1.6{\mu}C/cm^2$ so the minimum critical thickness might be at least 70 nm for device. Both different thickness films, 70 and 140 nm, indicated that the characteristic of current density-voltage was measured for $10^{-6}{\sim}10^{-7}A/cm^2$ below 15 V and the thicker film maintained relatively lower current density than thinner one. From these results, we can expect that the electrical properties for the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer were able to be on the trade-off relationship between the remanent polarization with the bias voltage and the leakage current.

키워드

참고문헌

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피인용 문헌

  1. Influence of the processing method on the properties of a PVDF film vol.54, pp.6, 2011, https://doi.org/10.1007/s11182-011-9669-1