• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.1
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• pp.1-8
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• 2002

The high frequency ultrasonic transducers using polyvinyliden fluoride(PVDF) and polyvinylidene fluoride trifluorethyylene(P(VDF-TrFE)) were developed. The characteristics of fabricated high frequency ultrasonic transducer such as beam diameter, high frequency ultrasonic detection field and amplitude of the first pulse echo signal from the test target in the water were analyzed. The high frequency ultrasonic detection field was affected by the length of coaxial cable between high frequency transducer and ultrasonic pulser/receiver. As the size of the test target increased, the high frequency detection field decreased and the amplitude of a reflection signal increased. The peak amplitude of the first pulse echo signal of P(VDF-TrFE) transducer was higher than that of PVDF transducer. The high frequency ultrasonic detection field of PVDF transducer was wider than that of P(VDF-TrFE) transducer. With C-scan testing, the developed high frequency ultrasonic transducer could detect the 30 to $100{\mu}m$ of hydrogen induced crack of steel specimen by C-scan testing.

• Proceedings of the Korean Fiber Society Conference
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• 2002.04a
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• pp.207-210
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• 2002

PVDF는 측쇄에 C=O기를 갖는 고분자인 PMMA와 PVAc와의 블렌드 및 주쇄에 C=O기를 갖는 poly(1,4-butylene adipate) (PBA)와의 블렌드에서 PVDF의 융점보다 상당히 높은 온도에서 LCST거동을 보이고 있음이 알려져 있다. 그런데 PVDF/PMMA와 PVDF/PVAC 블렌드계에서는 LCST가 고분자의 열분해온도와 유사하여 LCST거동을 실험적으로 관찰하기 어려웠다. 그런데 PVDF/PBA 블렌드계에서는 실험적으로 측정할 수 있을 정도로 LCST가 낮아지긴 하였지만 PBA의 열분해를 완전히 배제하기엔 아직도 높은 온도이다.[1] (중략)

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.114-117
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• 2011

A thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated and then thin 1.6 ${\mu}m$ thickness P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated also. These thick and thin P(VDF/TrFE) film pyroelectric infrared ray sensor was mounted in TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength for human body detecting with each other. The noise output voltage of the thick P(VDF/TrFE) film pyroelectric infrared ray sensor were 380 mV and NEP(noise equivalent power) is $3.95{\times}10^{-7}$ W which is the similar value with the commercial pyroelectric infrared ray sensor using ceramic materials as a sensing material. The NEP and specific detectivity $D^*$ of the thin P(VDF/TrFE) film pyroelectric infrared ray sensor were $2.13{\times}10^{-8}$ W and $9.37{\times}106$ cm/W under emission energy of 13 ${\mu}W/cm^2$ respectively. These result caused by lower thermal diffusion coefficient of a thin 1.6 ${\mu}m$ thickness PVDF/TrFE film than the thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.130-131
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• 2007

In this study, polyvinylidene fluoride/trifluoroethylene (PVDF-TrFE) was investigated. For a metal-ferroelectic-metal (MFM) structure, We obtained that the 70 nm-thick film showed the maximum polarization of $8.24\;{\mu}C/cm^2$, 2Pr of $6\;{\mu}C/cm^2$ and the coercive voltage of ${\pm}3.1\;V$ at 12 V. The 140 nm-thick film showed higher performance. However, the thicker film required a higher voltage. The current density was $10^{-6}{\sim}10^{-7}\;A/cm^2$ under 15 V. We can expect from these results that the electrical properties of the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer, be able to be on the trade-off relationship between the remanent polarization and the leakage current.

• Composites Research
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• v.17 no.4
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• pp.61-67
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• 2004

Nondestructive damage sensitivity on single-basalt fiber/epoxy composites was evaluated by micromechanical technique and acoustic emission (AE). Piezoelectric lead-zirconate-titanate (PZT), polyvinylidene fluoride (PVDF) and poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer were used as AE sensor, respectively. In single-fiber composite, the damage sensing with different sensor types were compared to each other. Piezoelectric PVDF polymer sensor was embedded in and attached on the composite, whereas PZT sensor was only attached on the surface of specimen. In case of embedded polymer sensors, responding sensitivity was higher than that of the attached case. It can be due to full constraint inside specimen to transfer elastic wave coming from micro-deformation. For both the attached and the embedded cases, the sensitivity of P(VDF-TrFE) sensor was almost same as that of conventional PVDF sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.881-884
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• 2008

In this study, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) in the composition from 51/49, was deposited on platinum for a metal-ferroelectric-metal structure. From XRD patterns, the 70 nm- and 140 nm-thick PVDF-TrFE films showed the intensity peak of near $20^{\circ}$ connected to a ferroelectric phase. Moreover, the thicker film indicated the higher intensity than thinner one. The difference of the remanent polarization (2Pr) at 0 V is decreased gradually from 10.19 to $5.7{\mu}C/cm^2$ as the thickness decrease from 140 to 70 nm. However, when the thickness decreased to 50 nm, the 2Pr rapidly drop to $1.6{\mu}C/cm^2$ so the minimum critical thickness might be at least 70 nm for device. Both different thickness films, 70 and 140 nm, indicated that the characteristic of current density-voltage was measured for $10^{-6}{\sim}10^{-7}A/cm^2$ below 15 V and the thicker film maintained relatively lower current density than thinner one. From these results, we can expect that the electrical properties for the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer were able to be on the trade-off relationship between the remanent polarization with the bias voltage and the leakage current.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2131-2134
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• 2015

In this study, It has been demonstrated a new and realizable possibility of the ferroelectric random access memory devices by all solution processing method with paper substrates. Organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin films were formed on paper substrate with Al electrode for the bottom gate structure using spin-coating technique. Then, they were subjected to annealing process for crystallization. The fabricated PVDF-TrFE thin films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). It was found from polarization versus electric field (P-E) measurement that a PVDF-TrFE thin film on paper substrate showed very good ferroelectric property. This result agree well with that of a PVDF-TrFE thin film fabricated on the rigid Si substrate. It anticipated that these results will lead to the emergence of printable electron devices on paper. Furthermore, it could be fabricated by a solution processing method for ferroelectric random access memory device, which is reliable and very inexpensive, has a high density, and can be also fabricated easily.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.3
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• pp.268-274
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• 2004

Patch type piezo-polymer sensors for smart structures were experimented to detect elastic wave. The pencil lead braking test was performed to analyze the characteristics of patch-type piezo-polymer sensors such as polyvinyliden fluoride (PVDF) and polyvinylidene fluoride trifluorethylene (P(VDF-TrFE)) for several test specimens with various elastic wave velocities and acoustical impedances. The characteristics of the patch-type piezo-polymer sensor were compared with the commercial PZT acoustic emission (AE) sensor. The vacuum grease and epoxy resin were used as a couplant for the acoustic impedance matching between the sensor and specimen. The peak amplitude of elastic wave increased as the diameter of piezo-film and acoustical impedance of the specimen increased. The frequency detection range of the piezo-film sensors decreased with increasing diameter of the piezo-film sensor. The P(VDF-TrFE) sensor was more sensitive than the PVDF sensor.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.30 no.3
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• pp.227-236
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• 1994

The characteristics of the P(VDF-TrFE) acoustic microscope transducer were evaluated theoretically and experimentally by comparison with those of the PVDF and the ZnO acoustic microscope transducers. It was found that its insertion loss was about 5dB lower than that of the PVDF and about 13$\textbf{dB}$ higher than that of the ZnO. And its relative bandwidth was 20% which could produce the effective acoustic pulse waves having about 4 periods duration into water. Another finding was that the effective horizontal focusing resolution and the focal depth were $120\mu m and $1.5mm$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.665-671
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• 2017

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.