한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제21권4호
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  • Pages.354-361
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  • 2008
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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BTMSM/O2 유량변화에 따른 SiOCH 박막 결합모드의 2차원 상관관계 특성

Properties of SiOCH Thin Film Bonding Mode by BTMSM/O2 Flow Rates

  • 김종욱 (청주대학교 전자공학과) ;
  • 황창수 (공군사관학교 물리학과) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • 발행 : 2008.04.01
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초록

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

키워드

참고문헌

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피인용 문헌

  1. Properties of Dielectric Constant and Bonding Mode of Annealed SiOCH Thin Film vol.22, pp.1, 2009, https://doi.org/10.4313/JKEM.2009.22.1.047