Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Improved SPICE MOSFET RF Model Considering Wide Width Effect

Wide Width Effect를 고려하여 개선된 SPICE MOSFET RF Model 연구

  • Cha, Ji-Yong (School of Electronics and Information Engineering, Hankuk University of Foreign Studies) ;
  • Cha, Jun-Young (School of Electronics and Information Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seong-Hearn (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
  • 차지용 (한국외국어대학교 전자정보공학부) ;
  • 차준영 (한국외국어대학교 전자정보공학부) ;
  • 이성현 (한국외국어대학교 전자정보공학부)
  • Published : 2008.02.25
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Abstract

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

본 연구에서는 게이트 finger수가 증가될수록 드레인 전류의 증가율과 차단주파수가 감소되는 wide width effect를 관찰하였으며, 이 현상을 모델링하기 위하여 기존 BSIM3v3 RF 모델에 finger수에 무관한 외부 소스 저항을 새로 첨가한 개선된 SPICE MOSFET RF 모델을 개발하였다. 이러한 모델로 시뮬레이션된 Nf 종속 드레인 전류와 차단주파수는 기존 BSIM3v3 RF모델보다 $0.13{\mu}m$ multi-finger MOSFET의 측정데이터와 더 잘 일치하였으며, 이는 개선된 RF 모델의 정확도를 증명한다.

Keywords

References

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