한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제20권11호
  • /
  • Pages.939-942
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  • 2007
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Ultrathin-body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가

Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body(UTB) Silicon-on-insulator(SOI) Metal Oxide Semiconductors Field Effect Transistor

  • 김관수 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • 발행 : 2007.11.01
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초록

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

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참고문헌

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