Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical and Microstructure Properties on Sintering Conditions of ZnO Varistor

소결 조건에 따른 ZnO 바리스터의 미세구조 및 전기적 특성

  • Published : 2006.07.01
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Abstract

Microstructure and electrical properties of ZnO varistors as a function of sintering temperature and times were investigated. Sintering temperature and times greatly affected electrical properties and Bi-rich liquid phase of the microstructure. The varistor which were sintered at $1125^{\circ}C\sim1150^{\circ}C$, for 2 hr exhibited the varistor voltage$(V_c)$, nonlinear coefficient $(V_{10mA}/V_{1mA})$, leakage current$(I_L)$ dielectric constant and dissipation factor as $225\sim250V/mm,\;0.89\sim0.92,\;0.8\sim1.1{\mu}A,\;720\sim740\;and\;1.8\sim2.0%$, respectively.

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References

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