JSTS:Journal of Semiconductor Technology and Science

  • 제6권2호
  • /
  • Pages.101-105
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  • 2006
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Nanoscale Floating-Gate Characteristics of Colloidal Au Nanoparticles Electrostatically Assembled on Si Nanowire Split-Gate Transistors

  • Jeon, Hyeong-Seok (Department of Nanotechnology, Hanyang University) ;
  • Park, Bong-Hyun (Department of Nanotechnology, Hanyang University) ;
  • Cho, Chi-Won (Division of Electronics and Computer Engineering, Hanyang University) ;
  • Lim, Chae-Hyun (Department of Nanotechnology, Hanyang University) ;
  • Ju, Heong-Kyu (Department of Nanotechnology, Hanyang University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University) ;
  • Lee, Seung-Beck (Department of Electrical Engineering, Korea University)
  • 발행 : 2006.06.30
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초록

Nanoscale floating-gate characteristic of colloidal Au nanoparticles electrostatically assembled on the oxidized surface of Si nanowires have been investigated. The Si nanowire split-gate transistor structure was fabricated by electron beam lithography and subsequent reactive ion etching. Colloidal Au nanoparticles with ${\sim}5$ nm diameters were selectively deposited onto the Si nanowire surface by 2 min electrophoresis. It was found that electric fields applied to the self-aligned split side gates allowed charge to be transferred on the Au nanoparticles. It was observed that the depletion mode cutoff voltage, induced by the self-aligned side gates, was shifted by more than 1 V after Au nanoparticle electrophoresis. This may be due to the semi-one dimensional nature of the narrow Si nanowire transport channel, having much enhanced sensitivity to charges on the surface.

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