Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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A Study on the Zeta-potential of CMP processed Sapphire Wafers

CMP 가공된 사파이어웨이퍼의 웨이퍼내 표면전위에 관한 연구

  • 황성원 (전북지방 중소기업청) ;
  • 신귀수 (전북전략산업기획단) ;
  • 김근주 (전북대학교 기계공학과, 공업기술연구센터)
  • Published : 2005.02.01
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Abstract

The sapphire wafer was polished by the implementation of the surface machining technology based on nano-tribology, The removal process has been performed by grinding, lapping and chemical-mechanical polishing. For the chemical mechanical polishing process, the chemical reaction between the slurry and sapphire wafer was investigated in terms of the change of Zeta-potential between two materials. The Zeta-potential was -4.98 mV without the slurry in deionized water and was -37.05 mV for the slurry solution. By including the slurry into the deionized water the Zeta-potential -29.73 mV, indicating that the surface atoms of sapphire become more repulsive to be easy to separate. The average roughness of the polished surface of sapphire wafer was ranged to 1∼4$\AA$.

Keywords

References

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