센서학회지 (Journal of Sensor Science and Technology)

  • 제14권6호
  • /
  • Pages.387-394
  • /
  • 2005
  • /
  • 1225-5475(pISSN)
  • /
  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
권호 표지
DOI QR코드

DOI QR Code

나노 와이어 MOSFET 구조의 광검출기를 가지는 SOI CMOS 이미지 센서의 픽셀 설계

Design of SOI CMOS image sensors using a nano-wire MOSFET-structure photodetector

  • 도미영 (경북대학교 전기전자공학과) ;
  • 신영식 (경북대학교 전기전자공학과) ;
  • 이성호 (경북대학교 전기전자공학과) ;
  • 박재현 (경북대학교 전기전자공학과) ;
  • 서상호 (경북대학교 전기전자공학과) ;
  • 신장규 (경북대학교 전기전자공학과) ;
  • 김훈 (한국전자부품연구원)
  • Do, Mi-Young (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Shin, Young-Shik (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Park, Jae-Hyoun (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Seo, Sang-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Hoon (Korea Electronics Technology Institute)
  • 발행 : 2005.11.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In order to design SOI CMOS image sensors, SOI MOSFET model parameters were extracted using the equation of bulk MOSFET model parameters and were optimized using SPICE level 2. Simulated I-V characteristics of the SOI NMOSFET using the extracted model parameters were compared to the experimental I-V characteristics of the fabricated SOI NMOSFET. The simulation results agreed well with experimental results. A unit pixel for SOI CMOS image sensors was designed and was simulated for the PPS, APS, and logarithmic circuit using the extracted model parameters. In these CMOS image sensors, a nano-wire MOSFET photodetector was used. The output voltage levels of the PPS and APS are well-defined as the photocurrent varied. It is confirmed that SOI CMOS image sensors are faster than bulk CMOS image sensors.

키워드

참고문헌

  1. Eric R. Fossum, 'CMOS image sensors: Electronic camera-on-a-chip', IEEE Transaction on Electron Device, vol. 44, no. 10, pp. 1689-1698, 1997 https://doi.org/10.1109/16.628824
  2. J.-P. Colinge, Silicon-on-insulator technology: Materials to VLSI, Kluwer Academic Publishers, Belgium, pp. 1-5, 1997
  3. C. Xu, W Zhang, and M. Chan, 'A low voltage hybrid bulk/SOl CMOS active pixel image sensor,' IEEE Electron Device Letters, vol. 22, no. 5, pp. 248-250, 2001 https://doi.org/10.1109/55.919244
  4. K. Barmham and D. Uvedensky, Low-Dimensional Semiconductor Structures, Cambridge University Press, London, 2001
  5. I.-S. Wang, J.-H. Park, S.-H. Seo, H.-J. Yoon, J.-K. Shin, P. Choi, M.-B. Lee, Y-C. Jo, H. Kim, and W.-J. Cho, 'Quantum wire SOI MOSFET with subband effects using conventional photo-lithography and its application to photodetector', 제11회 한국 반도체학술대회 논문집, pp. 277-278, 무주, 한국, 2004
  6. S. S.-S. Chung, 'A complete model of the I-V characteristics for narrow-gate MOSFET's', IEEE Transaction on Electron Device, vol. 37, no. 4, pp. 1020-1030, 1990 https://doi.org/10.1109/16.52437
  7. B. Dierickx, D. Scheffer, G. Meynants, W Ogiers, and J. Vlummens, 'Random addressable active pixel image sensors', Proc. of SPIE Advanced Focal Plane Arrays and Electronic Cameras, vol. 2950, pp. 27-32, Germany, 1996
  8. 이준규, 박재현, 서상호, 왕인수, 신장규, 김훈, 'Photo-lithography를 이용한 sub-10nm 실리콘 세선 제작' 한국센서학회 종합학술대회 논문집 , pp. 316-319, 광주, 한국,2002