JSTS:Journal of Semiconductor Technology and Science

  • 제4권3호
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  • Pages.133-140
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  • 2004
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

  • 발행 : 2004.09.30
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초록

The origin of the phenomena, obstructing circuit performance in the RF operating regime, as well as their modeling will be discussed. The applied surface-potential-based modeling allows self-consistent description of all phenomena important for accurate circuit simulation, as demonstrated with the MOSFET model HiSIM.

키워드

참고문헌

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