Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effects of Ti Underlayer on Microstructure in Cu(B)/Ti/SiO2 Structure upon Annealing

Cu(B)/Ti/SiO2 구조를 열처리할 때 일어나는 미세구조 변화에 미치는 Ti 하지층 영향

  • Lee Jaegab (School of Advanced Materials Engineering, Kookmin University)
  • Published : 2004.12.01
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Abstract

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

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