• Korean Journal of Materials Research
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• v.14 no.4
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.829-834
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• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.253-261
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• 1994

Transformation behavior and superelastic behavior of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, X-ray diffraction, tensile test and transmission electron microscopy. Two types of heat treatment are given to the specimens: i) Solutions treatment. ii) thermo-mechanical treatment. The transformation sequence in solution treated Ti-Ni-Cu Alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\rightleftarrows}B19^{\prime}$ and it proceeds in two stages by addition of 10at.%Cu, i. e, $B2{\rightleftarrows}B19{\rightleftarrows}B19^{\prime}$. Also, it has been found that Ti-30Ni-20Cu alloy transformed in one stage : $B2{\rightleftarrows}B19$. The thermo-mechanically treated Ti-47Ni-3Cu alloy transformed in two stages: B2${\rightleftarrows}$rhomboheral phase${\rightleftarrows}B19^{\prime}$, while transformation sequence in Ti-45Ni-5Cu and Ti-40Ni-10Cu alloy transformed as same as solution treated specimens. The critical stress for inducing slip deformation in solution treated and thermo-mechanically treated Ti-40Ni-10Cu alloy is about 90MPa and 320Mpa respectively.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.3
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• pp.149-156
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• 1992

Transformation behavior and reversible shape memory effct of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, differential scanning calorimetry. X-ray diffraction and strain gage sensor. The transformation sequence in Ti-Ni-Cu alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\leftrightarrow}B19^{\prime}$ and it proceeds in two stages by addition of 10 at.%Cu. i.e. $B2{\leftrightarrow}B19{\leftrightarrow}B19^{\prime}$. But the content of Cu increases up to 20at.%, it has been transformed in one stage ; $B2{\leftrightarrow}B19$. The shape change of Ti-40Ni-10Cu alloy which was constrain aged in circular form bended in $B2{\leftrightarrow}B19$ transformation but it spreaded out in $B19{\leftrightarrow}B19^{\prime}$ transformation. The amount of reversible shape change (${\Delta}{\varepsilon}$) of Ti-47Ni-3Cu alloy constrain aged at $400^{\circ}C$ after solution treatment has a maximum value of about $5.6{\times}10^{-3}$, but that of cold rolled and constrain aged specimens exhibits a little value independent of Cu concentrations.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.735-740
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• 2005

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

• Korean Journal of Clinical Laboratory Science
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• v.50 no.2
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• pp.205-210
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• 2018

Salvianolic acid B, which is a compound in the Salvia miltiorrhiza, has diverse biological activities, In particular, the antioxidative effects were reported to be involved in the protection of hepatocytes, neurons, and various cell types. On the other hand, some phenolic compounds, such as ferulic acid, which is regarded as an antioxidant, plays a pro-oxidative role in the specific transitional metal environment, which could explain the anticancer effect. This study examined the pro-oxidative effects of salvianolic acid B in the presence of $Cu^{2+}$. Treatment with both salvianolic acid B and $Cu^{2+}$ induced the transition of supercoiled DNA to the open circular or linear form but not in the sole salvianolic acid B or $Cu^{2+}$ treatments. Salvianolic acid B reduced the $Cu^{2+}$ to $Cu^+$ using neocuproine, a $Cu^+$ specific chelator. In addition, catalase, an enzyme that breaks down the $H_2O_2$ to water and molecular oxygen, inhibited the DNA breakage. $H_2O_2$, a reactive oxygen species, has detrimental effects on biological molecules, particularly DNA. Overall, the reduction of $Cu^{2+}$ by salvianolic acid B could lead to the production of $H_2O_2$ followed by DNA breakage. These results suggest that the pro-oxidative effects could be the one of the anti-cancer mechanisms of salvianolic acid B, which remains to be explained.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2005.11a
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• pp.43-43
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• 2005

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.386-393
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• 1995

A Abstract Producing process of FGM by SHS process has been investigated and $TiB_2$/Cu based FGM was fabricated by the process. When raw material powders were stacked on, Cu substrate, composition profile can be graded. This stacked body was compressed and vacuum­s sealed into the capsule for the synthesis. This sample was ignited and compressed under high h hydro - pressure. By the observation of the crystal phases and microstructures of produced $TiB_2$/Cu FGM samples, the compositional gradient was able to be identified.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.67-73
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• 2012

After flash memory card(FMC) was manufactured by $B^2it$ process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag ${\rightarrow}$ Cu is faster than Cu ${\rightarrow}$ Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.552-557
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• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.