References
- B. Aspar, H. Moriceau, ECS 96-3, 99 (1996)
- A. Matsumura, K. Kawamura, I. Harnaguchi, S. Takayama and T. Yano, J. Mater. Sci: Materials in electronics. 10, 365 (1999) https://doi.org/10.1023/A:1008997423606
- J. Stoemenos, A. Garcia, B. Aspar and J. Margail, J. Electrochem. Soc., 142, 1248 (1995) https://doi.org/10.1149/1.2044160
- S. Nakashima. IEICE: trans electron. E80 C. 364 (1997)
- A. J. Auberton-Herve, T. Barge and F. Metral, ECS 98-1, 1341 (1998)
- A. J. Auberton-Herve, B. Ghyselen, F. Leterter, C. Maleville, T. Barge and M. bruel, ECS 99-3, 93 (1999)
- M. BRUEL, B. ASPAR, and A.J. AUBERTON-HERVE, Jpn. J. Appl. Phys, 36, 1636 (1997) https://doi.org/10.1143/JJAP.36.1636
- L. FELIPE GILES and YASUO KUNII, Journal of Electronic Materials, 28(4), 372 (1999) https://doi.org/10.1007/s11664-999-0236-2
- A. OGURA, Jpn. J. Appl. Phys. 36, 1519 (1997) https://doi.org/10.1143/JJAP.36.1519
- H. Aga, M. Nakano and K. Mitani, Jpn. J. Appl. Phys. 38, 2694 (1999) https://doi.org/10.1143/JJAP.38.2694