Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation of ITO Thin Films by FTS{Facing Targets Sputtering) Method

FTS법을 이용한 ITO박막의 제작

  • 김건희 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과) ;
  • 김한기 (삼성 SDI) ;
  • 손인환 (신성대학 디지털전기계열) ;
  • 장경욱 (경원전문대 자동차과) ;
  • 이원재 (경원전문대 전자정보과) ;
  • 최형욱 (경원대학교 전기정보공학과) ;
  • 박용서 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2004.11.01
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Abstract

The ITO thin films were prepared by the FTS(Facing Targets Sputtering) system. The ITO thin films are deposited by changing the input current and working gas pressure. Then, electric characteristics, transmittance and surface roughness of ITO thin films were measured by Hall effect measurement, UV-VIS spectrometer and AFM. As a result, the ITO thin film was fabricated with resistivity 6xl0$^{-4}$ Ωㆍcm, carrier mobility 52.11 $\textrm{cm}^2$/Vㆍsec, carrier concentration 1.72 x $10^{20}$ $cm^{-3}$ transmittance over 85 % of ITO film at working gas pressure 1 mTorr and input current 0.6 A.

Keywords

References

  1. R. H. Freiend, R. W. Gymer, and A. B. Holmes, 'Electroluminescence in conjugated polymers', Nature 397, p. 121, 1999 https://doi.org/10.1038/16393
  2. C. C. Wu, C. I. Wu, and J. C. Sturn, 'Surface modification if indium tin oxide by plasma treatment', A. Kahn, Appl. Lett. 70, p. 1384, 1997 https://doi.org/10.1063/1.118584
  3. K. Zhang, F. Zhu, C. H. A. Huan, and A. T. S. Wee, 'Effect of hydrogen partial pressure on opoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method', J. Appl. Phys. 86, p. 974, 1999 https://doi.org/10.1063/1.370834
  4. J. S. Jung and S. S. Lee, 'Development of indium tin oxide film texture during DC magnetron sputtering deposition', J. Crystal Growth 259, p. 343, 2003 https://doi.org/10.1016/j.jcrysgro.2003.07.006
  5. Y. Hoshi, H. Kato, and K. Funatsu, 'Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering', Thin solid films, Vol. 445, p. 245, 2003 https://doi.org/10.1016/S0040-6090(03)01182-9
  6. K. Ishibashi, K. Hirata, N. Hosokawa, 'Mass spectrometric ion analysis in the sputtering of oxide targets', J. Vac. Sci. Technol., Vol. A10 (4), p. 1719, 1992
  7. 금민종, 김경환, '대향타켓스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 박막의 제작' 전기전자재료학회논문지, 17권, 4호, p. 442, 2004
  8. 금민종, 손인환, 최명규, 추순남, 최형욱, 신영화, 김경환, 'FBAR용 ZnO/SiO2/Si 박막의 결정학적 특성에 관한 연구', 전기전자재료학회논문지, 16권, 8호, p. 711, 2003
  9. 김경환, 손인환, 금민종, '대향타겟식 스퍼터링에 의한 Co-Cr 박막의 제작', 전기전자재료학회논문지, 11권, 5호, p. 418, 1998

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