대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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III-V족 반도체에서 계단형 pn 접합의 해석적 항복전압 모델

Analytical Model of Breakdown Voltages for Abrupt pn Junctions in III-V Binary Semiconductors

  • 정용성 (서라벌대학 멀티미디어학부)
  • 발행 : 2004.09.01
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초록

III-V족 반도체 GaP GaAs 및 InP의 계단형 pn 접합에서의 항복전압을 위한 해석적 식을 유도하였다. 해석적 항복전압을 위해 각 물질에 대한 이온화계수 파라미터를 이용하여 유효 이온화계수를 추출하였고, 이의 이온화 적분을 통해 얻은 해석적 항복전압 결과는 수치적 결과 및 실험 결과와 10% 오차 범위 이내로 잘 일치하였다.

Analytical expressions for breakdown voltages of abrupt pn junction in GaP, GaAs and InP of III-V binary semiconductors was induced. Getting analytical breakdown voltage, effective ionization coefficients were extracted using ionization coefficient parameters for each materials. The result of analytical breakdown voltages followed by ionization integral agrees well with numerical and experimental results within 10% in error.

키워드

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