펄스 레이저 어블레이션을 이용한 비정질 GaN박막의 성장 및 특성분석

Growth and characterization of amorphous GaN film using a pulsed-laser ablation

  • 심승환 (한양대학교, 세라믹공정연구센터, 세라믹공학과) ;
  • 윤종원 ;
  • ;
  • 심광보 (한양대학교, 세라믹공정연구센터, 세라믹공학과)
  • 발행 : 2004.02.01

초록

고밀도 GaN 타겟의 레이저 어블레이션으로 상온에서 비정질 GaN 박막을 제조하였다. 다양한 Ar 압력 및 레이저 에너지로 증착된 박막의 표면미세구조 및 조성분석 결과, 10Pa의 압력하에 증착된 박막은 smooth한 표면을 갖는 비정질 GaN로 구성되었음을 확인하였으며, 특히 200mJ/pu1se로 증착된 박막은 저 에너지에서 증착된 박막과 비교하여 결정성의 증가 및 화학양론에 가까운 조성을 나타냈다. 상온 photoluminescence spectra로부터 비정질 GaN 박막은 약 2.8eV에서 강한 band gap발광특성이 관측되었으며, 200mJ/pu1se의 10 Pa에서 가장 높은 발광효율을 나타냈다.

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

키워드

참고문헌

  1. Appl. Phys. Lett. v.69 Ridge-geometry InGaN multi-quantum-well-structure laser diodes S.Nakaumra;M.Senoh;s.Nagahama;N.Iwasa;T.Yamada;T.Matsushita;Y.Sugimoto;H.Kiyoki https://doi.org/10.1063/1.116913
  2. Appl. Phys. Lett. v.62 Metal semiconductor field effect transisor based on single crystal GaN M.A.Khan;J.N.Kuznia;A.R.Bhattarai;D.T.Olson https://doi.org/10.1063/1.109549
  3. MRS Internet J. Nitride Semicond. Res. v.6 Visible luminescent activation of amorphous AIN : Eu thin film phosphors with oxygen M.L.Caldwell;P.G.Van Patten;M.E.Kordesch;H.H.Richardson https://doi.org/10.1557/S1092578300000259
  4. Phys. Rev. Lett. v.79 Can amorphous GaN serve as a useful electronic material P.Stumm;D.A.Drabold https://doi.org/10.1103/PhysRevLett.79.677
  5. Solid State Commum. v.108 Density dependence of the structural and electronic properties of amorphous GaN M.Yu;D.A.Drabold
  6. J. Non-Cryst. Solids. v.283 Exitation mechanisms and structure related $Er^{3+}$emission in amorphous and nanocrystalline GaN films S.B.Aldabergenova;M.Albrecht;A.A.Andreev;C.Inglefield;J.Viner;V.Yu.Davydov;P.C.Taylor;H.P.Strunk https://doi.org/10.1016/S0022-3093(01)00359-3
  7. J. Non-Cryst. Solids v.198-200 Photoconductive a-GaN prepared by reactive sputtering S.Nonomura;S.Kobayashi;T.Gotoh;S.Hirata;T.Ohmori;T.Itoh;S.Nitta;K.Morigaki https://doi.org/10.1016/0022-3093(95)00675-3
  8. Appl. Phys. Lett. v.74 Blue luminescence from amorphous GaN nanoparticles synthesized in situ in a polymer Y.Yang;V.J.Leppert;S.H.Risbud;B.Twamley;P.P.Power;H.W.H.Lee https://doi.org/10.1063/1.123819
  9. Appl. Phys. Lett. v.78 Ion-assisted deposition of amorphous GaN: Raman and optical properties A.Bittar;H.J.Trodahl;N.T.Kemp;A.Markwitz https://doi.org/10.1063/1.1345800
  10. Rev. Sci. Instrum. v.67 Improved uniformity of multielement thin films prepared by off-axis pulsed laser deposition using a new heater design J.F.M.Cillessen;M.J.M.de Jong;X.Croiz https://doi.org/10.1063/1.1147447
  11. Appl. Phys. v.A 76 Pressure-controlled preparation of nanocrystalline complex oxides using pulsed-laser ablation at room temperature J.W.Yoon;T.Sasaki;N.Koshizaki
  12. J. Appl. Phys. v.93 Properties of amorphous GaNx prepared by ion beam assisted deposition at room temperature Y.Kang;D.C.Ingram https://doi.org/10.1063/1.1555258
  13. Jpn. J. Appl. Phys. v.38 Ultraviolet photoconductive hydrogenated amorphous and microcrystalline GaN S.Yagi https://doi.org/10.1143/JJAP.38.L792
  14. Pulsed laser deposition of thin films (2nd ed.) Douglas B. Chrisey