Transactions on Electrical and Electronic Materials

  • 제1권4호
  • /
  • Pages.7-10
  • /
  • 2000
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering

  • Lee, Hee-Kab (Department of Electrical and Electronic Enginnering, Dongshin University) ;
  • Park, Yong-Pil (Department of Electrical and Electronic Enginnering, Dongshin University) ;
  • Kim, Jeong-Ho (Department of Mechatronics Engineering , Changwon National University)
  • 발행 : 2000.12.01
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초록

Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.

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