Transactions on Electrical and Electronic Materials
- 제1권4호
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- Pages.1-6
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- 2000
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers
- Saddow, S.E. (Emerging Materials Research Laboratory, Detp of ECE, Mississippi State) ;
- Kumer, V. (Emerging Materials Research Laboratory, Detp of ECE, Mississippi State) ;
- Isaacs-Smith, T. (Auburn University, Physis Department, Leach Science Center, Aubrm University) ;
- Williams, J. (Auburn University, Physis Department, Leach Science Center, Aubrm University) ;
- Hsieh, A.J. (Army Research Laboratory, Weapons and Materials Research Directorate, AMSRL-WM-MA, Aberdeen Proving Ground) ;
- Graves, M. (David C.Swalm School of Chemical Engineering Mississippi State) ;
- Wolan, J.T. (David C.Swalm School of Chemical Engineering Mississippi State)
- 발행 : 2000.12.01
초록
The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600