Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Secondary Defects in Silicon after 2-step Annealing of the High Energy $^{75}AS^+$ Ion Implanted Silicon

고에너지비소 이온 주입후 2단계 열처리시 2차결함에 대한 연구

  • 윤상현 (두원공과대학 전기과) ;
  • 곽계달 (한양대학교 공과대학 전자전기공학부)
  • Published : 1998.10.01
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Abstract

Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.

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References

  1. Appl. Phys. Lett. no.30 Intrinsic gettering by oxide precipitates induced dislocations in Czochralski Si T. Y. Tan;E. E. Gardner;W. K. Tice
  2. Jpn. J. Appl. Phys. no.21 Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior S. Kishino;Y. Matsushita;M. Kanamori;T. Iizuka
  3. J. Appl. Phys. no.47 Characterizaion of structural defects in annealed silicon containing oxygen D. M. Maher;A. Staudinger;J. R. Patel
  4. J. Appl. Phys. no.55 Depth profiles of interstitial oxygen concentrations in silicon subjected to three-step annealing S. Isomae;S. Aoki;K. Watanabe
  5. J. Appl. Phys. no.62 Information of the oxygen precipitation-freezone in silicon K. Yang;J. Carle;R. Kleinhenz
  6. Appl. Phys. Lett. no.41 Damage induced through megavolt arsenic implantation into silicon P. F. Byrne;N. W. Cheung;D. K. Sadana
  7. Nucl. Instru. and Methods in Phys. Res. v.B59/60 MeV-ion-induced damage in Si and its annealing M. Tamura;T. Ando;K. Ohyu
  8. Jpn. J. Appl. Phys. no.32 Proximity Getterring of Heavy Metals by High-Energy Ion Implantation T. Kuroi;Y. Kawasaki;S. Komori;K. Fukumoto;M. Inuish;K. Tsukamoto;H. Shinyashiki;T. Shingyoii
  9. Nucl. Instru. and Methods in Phys. Res. v.B96 Proximity Gettering of Au to Ion Beam induced Defects in Silicon J. Wong-Leung;J. S. Williams;R. G. Elliman;E. Nygren;D. J. Eaglesham;D. C. Jacobson;J. M. Poate
  10. Extended Abstracts of 18th SSDM MeV-Energy $B^{+}$, $P^{+}$ and $As^{+}$ Ion Implantation into Si M. Tamura;N. Natsuaki;Y. Wada;E. Mitani