한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권8호
  • /
  • Pages.596-600
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  • 1998
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

PZT 박막 캐패시터의 2차 고조파 전류특성

The Second Harmonic Current Characteristic of PZT Thin Film Capacitor

  • 김동철 (고려대학교 공대 전기공학과) ;
  • 박봉태 (고려대학교 공대 전기공학과) ;
  • 고중혁 (고려대학교 공대 전기공학과) ;
  • 문병무 (고려대학교 공대 전기공학과)
  • 발행 : 1998.08.01
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초록

A method for the nondestructive read-out of the memory in ferroelectric thin films is demonstrated using the detection second harmonic currents introduced in the ferrolelectric capacitor as a response to an ac signal. The sign and phase of the second harmonic current depends on the polarized state +$P_r or -P_r$, The studied ferroelectric PZT thin film is found to have desirable features for the use as a memory element. This method and material seems as a promising approach for the nonvolatile memory storage.

키워드

참고문헌

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