Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of an AlGaAs/GaAs Double-Heterojunction Power FET

AlGaAs/GaAs double-heterojunction 전력용 FET의 설계

  • 박인식 (국민대학교 전자공학과) ;
  • 김상명 (국민대학교 전자공학과) ;
  • 신석현 (국민대학교 전자공학과) ;
  • 이진구 (국민대학교 전자공학과) ;
  • 신재호 (국민대학교 전자공학과) ;
  • 김도현 (국방과학연구소 전자공학과)
  • Published : 1993.08.01
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Abstract

In this paper, both feasible power gain and power added efficiency at the operating center frequency of 12 GHz are stressed to design a power FET with double-heterjunction structure. The variable parameters or the design are the unit gate width, the gate length, the doping density of AlGaAs, the AlGaAs thickness, the spacer thickness, the Al mole fraction, and the GaAs well thickness. The results of simulation for the FET with 1.mu.m gate length show that the power gain and the power added efficiency are 10.2 dB and 36.3% at 12GHz, respectively. An extrapolation of the relation between current gain and unilateral gain yields a 17 GHz cutoff frequency and 43GHz maximum frequency of oscillation. The calculation of the current versus voltage characteristics show that the output power of the device is about 0.62W.

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