Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 8
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- Pages.49-56
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- 1993
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- 1016-135X(pISSN)
A Lifetime Prediction Modeling for PMOSFET degraded by Hot-Carrier (I)
Hot-Carrier로 인한 PMOSFET의 소자 수명시간 예측 모델링(I)
Abstract
In this paper, we present a new lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and substrate current influence. The suggested model is applied to a different channel structured PMOSFET, dgm/gm of both SC-PMOSFET and BC-PMOSFET appear with one straigth line about Qbib, therefore, this model is independent of channel structure. The suggested model is applied to a different drain structured SC-PMOSFET. Unlike S/D structured SC-PMOSFET, dgm/gm of LDD structured SC-PMOSFET appears with one straight line about Qb, therefore, this model is dependent of drain structure.
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