Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.34-34
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- 2009
Thickness dependency of MAHONOS ($Metal/Al_2O_3/HfO_2/SiO_2/Si_3N_4/SiO_2/Si$ ) charge trap flash memory
- Published : 2009.11.12
Abstract
The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with