The Solid-electrolyte Characteristics of Ag-doped Germanium Selenide for Manufacturing of Programmable Metallization Cell

Programmable Metallization Cell 제작을 위한 Ag-doped Germanium Selenide의 고체전해질 특성

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M$\Omega$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.