대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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As을 첨가한 $Ge_1Se_1Te_2$ 박막의 상변화 특성연구

Phase transition characteristics of As-doped $Ge_1Se_1Te_2$ film

  • 김재훈 (광운대학교 전자재료공학과) ;
  • 김현구 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Kim, Jae-Hoon (Department of Electric Material Engineering of Kwangwoon University) ;
  • Kim, Hyun-Goo (Department of Electric Material Engineering of Kwangwoon University) ;
  • Chung, Hong-Bae (Department of Electric Material Engineering of Kwangwoon University)
  • 발행 : 2008.07.16
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초록

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

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