대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2008년도 제39회 하계학술대회
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- Pages.1289-1290
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- 2008
Cu를 도핑시킨 Programmable Metallization Cell의 특성연구
Characteristics research of Cu-doped Programmable Metallization Cell
- Nam, Ki-Hyun (Kwangwoon University) ;
- Ju, Long-Yun (Kwangwoon University) ;
- Chung, Hong-Bay (Kwangwoon University)
- 발행 : 2008.07.16
초록
Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
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