RF MOSFET IC 설계를 위한 수정된 SPICE BISM3v3 모델

Modified SPICE BSIM3v3 Model for RF MOSFET IC Design

  • 김종혁 (한국외국어대학교 전자정보공학부) ;
  • 이성현 (한국외국어대학교 전자정보공학부) ;
  • 김영욱 (동부일렉트로닉스)
  • Kim, Jong-Hyuck (Department of Electronic Engineering, Hankuk university of Foreign Studies) ;
  • Lee, Seong-Hearn (Department of Electronic Engineering, Hankuk university of Foreign Studies) ;
  • Kim, Young-Wug (Dongbu Electronics)
  • 발행 : 2006.06.21

초록

The improved model that external capacitances are connected to a conventional BSIM3v3 RF Macro model with Rg and Rsub is developed in this paper. The extracted external capacitances and resistances are modeled by scalable fitting equations. The modeled S-parameters of $0.13{\mu}m$ NMOSFET agree well with measured ones from 10MHz to 10GHz, verifying the accuracy of the improved model.

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