스퍼터링법을 이용한 산화알루미늄/6H-SiC 구조의 제작 및 특성

Fabrication and Properties of Aluminum oxide/6H-SiC Structures using Sputtering Method

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.