한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.155-156
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- 2006
R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가
Growth and characterization of ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy
- Han, Seok-Kyu (Department of Materials Science and Engineering, Chungnam National University) ;
- Hong, Soon-Ku (Department of Materials Science and Engineering, Chungnam National University) ;
- Lee, Jae-Wook (Korea Advanced Institute of Science and Technology) ;
- Lee, Jeong-Yong (Korea Advanced Institute of Science and Technology)
- 발행 : 2006.06.22
초록
Single crystalline ZnO fims were successfully grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the-r-plane sapphire was determined to be [-1101]