한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.47-48
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- 2006
$0.35{\mu}m$ 공정을 이용하여 제작된 MOSFET의 채널 변화에 따른 특성연구
MOSFET Characteristics with Channel Variation fabricated by $0.35-{\mu}m$ Process
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Kang, Jung-Han
(Dept. of Electrical and Electronic Engineering, Yonsei University) ;
- Ahn, Min-Su (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
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Yun, Il-Gu
(Dept. of Electrical and Electronic Engineering, Yonsei University)
- 발행 : 2006.06.22
초록
In this paper, intrinsic n channel MOSFETs with external parasitic components are modeled. Using sensitivity analysis, effective parasitic components are tested and the optimized model is extracted. The extracted model is fitted to the measured S-parameters with different channel width. Based on this methodology, this method, external parasitic components that affect MOSFET operations can be analyzed and modeled.