한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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- Pages.372-373
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- 2006
화학반응속도가 Cu CMP에 미치는 영향
The effect of chemical kinetics of slurry components on Cu CMP
- Jung, Won-Duck (Department of Precision & Mechanical Engineering in PNU) ;
- Chang, One-Moon (Department of Precision & Mechanical Engineering in PNU) ;
- Park, Sung-Min (Department of Precision & Mechanical Engineering in PNU) ;
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Jeong, Hae-Do
(Department of Precision & Mechanical Engineering in PNU)
- 발행 : 2006.11.09
초록
Chemical kinetics affects Cu CMP results (removal rate, Non uniformity etc.) Because Cu is removed by chemical action. Key factors in chemical kinetics are process temperature and concentration of slurry components. In this study, Hydrogen peroxide and citric acid were selected as a oxidant and a complexing agent and Slurry were made by mixing this components. In order to study effects of Chemical Kinetics, X-ray photoelectron spectroscopy (XPS) were performed on Cu sample after etching test as concentration of citric acid and slurry temperature. Finally Cu CMP was performed as same conditions.