한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.1174-1177
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- 2006
The effect of 3-mercapto-5-nitro-benzimidazole (MNB) and poly (methyl methacrylate) (PMMA) treatment sequence organic thin film transistor
- Park, Jin-Seong (Display 1 team, CTO)Display R&D Center, Samsung SDI Co., LTD.) ;
- Suh, Min-Chul (Display 1 team, CTO)Display R&D Center, Samsung SDI Co., LTD.) ;
- Jeong, Jong-Han (Display 1 team, CTO)Display R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Su-Young (Display 1 team, CTO)Display R&D Center, Samsung SDI Co., LTD.) ;
- Mo, Yeon-Gon (Display 1 team, CTO)Display R&D Center, Samsung SDI Co., LTD.)
- Published : 2006.08.22
Abstract
A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by
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