Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.7-8
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- 2005
Surface silicon film thickness dependence of electrical properties of nano SOI wafer
표면 실리콘막 두께에 따른 nano SOI 웨이퍼의 전기적 특성
- Bae, Young-Ho (Division of Electronics Engineering, Uiduk University) ;
- Kim, Byoung-Gil (Division of Electronics Engineering, Uiduk University)
- Published : 2005.11.10
Abstract
The pseudo MOSFET measurement technique has been a simple and rapid method for characterization of SOI wafers without any device fabrication process. We adopted the pseudo MOSFET technique to examine the surface silicon film thickness dependence of electrical properties of SOI wafer. The measurements showed that turn-on voltage increased and electron mobility decreased as the SOI film thickness was reduced in the SOI film thickness of less than 20 nm region.