Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.05a
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- Pages.173-176
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- 2004
Study of Post Excimer Laser Annealing effect on Silicide Mediated Polycrystalline Silicon.
실리사이드 매개 결정화된 다결정 실리콘 박막의 후속 엑시머 레이저 어닐링 효과에 대한 연구
- Choo, Byoung-Kwon (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
- Park, Seoung-Jin (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
- Kim, Kyung-Ho (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
- Son, Yong-Duck (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
- Oh, Jae-Hwan (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
- Choi, Jong-Hyun (Advanced Display Research Center and Department of Physics, Kyung Hee University) ;
- Jang, Jin (Advanced Display Research Center and Department of Physics, Kyung Hee University)
- 추병권 (경희대학교 차세대 디스플레이 연구 센터) ;
- 박성진 (경희대학교 차세대 디스플레이 연구 센터) ;
- 김경호 (경희대학교 차세대 디스플레이 연구 센터) ;
- 손용덕 (경희대학교 차세대 디스플레이 연구 센터) ;
- 오재환 (경희대학교 차세대 디스플레이 연구 센터) ;
- 최종현 (경희대학교 차세대 디스플레이 연구 센터) ;
- 장진 (경희대학교 차세대 디스플레이 연구 센터)
- Published : 2004.05.06
Abstract
In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.