The novel encapsulation method for organic thin-film transistor

새로운 방식의 유기박막트랜지스터 패시베이션 기술

  • Lee, Jung-Hun (New Functional Information Devices Team, Electronics and Telecommunication Research Institute) ;
  • Kim, Seong-Hyun (New Functional Information Devices Team, Electronics and Telecommunication Research Institute) ;
  • Kim, Ki-Hyun (New Functional Information Devices Team, Electronics and Telecommunication Research Institute) ;
  • Lim, Sang-Chul (New Functional Information Devices Team, Electronics and Telecommunication Research Institute) ;
  • Cho, Eu-Na-Ri (New Functional Information Devices Team, Electronics and Telecommunication Research Institute) ;
  • Jang, Jin (Department of Information Display, Kyunghee University) ;
  • Zyung, Tae-Hyung (New Functional Information Devices Team, Electronics and Telecommunication Research Institute)
  • 이정헌 (한국전자통신연구원 미래기술연구본부 신기능정보소자팀) ;
  • 김성현 (한국전자통신연구원 미래기술연구본부 신기능정보소자팀) ;
  • 김기현 (한국전자통신연구원 미래기술연구본부 신기능정보소자팀) ;
  • 임상철 (한국전자통신연구원 미래기술연구본부 신기능정보소자팀) ;
  • 조은나리 (한국전자통신연구원 미래기술연구본부 신기능정보소자팀) ;
  • 장진 (경희대학교 정보디스플레이학과) ;
  • 정태형 (한국전자통신연구원 미래기술연구본부 신기능정보소자팀)
  • Published : 2004.05.06

Abstract

In this study, we report a novel encapsulation method for longevity of an organic thin-film transistor (OTFT) using pentaceneby means of an adhesive multiplayerincluded Al film. For encapsulation of OTFTs, the Al film adhered onto the OTFT in a dry nitrogen atmosphere using a proper adhesive. A lifetime, which was defined as the time necessary to reduce mobility to 2% of initial mobility value, was observed from the typical $I_{D-VD}$ characteristics of the field-effect transistor (FET). The initial field effect mobility ${\mu}$ was measured to be $2.0{\times}10^{-1}\;cm^2/Vs$. The characterization was maintained for long times in air. No substantial degeneration occurred. The performance and the stability are probably due to the encapsulation effect.

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