• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.173-176
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• 2004

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

• 전자공학회논문지 IE
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• v.45 no.3
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• pp.13-19
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• 2008

In this paper, we propose a new IPC(Interlace to Progressive Conversion) method based on ELA(EDge Line based Average) interpolation using detecting the reliable edge direction. Existing ELA algorithms execute linear interpolation using edge direction without considering noises. In noisy images, these algorithms degrade quality because if interpolation based on the wrong edge direction. Out scheme is able to solve the problem of existing ELA algorithms in noisy images. First, filter a noisy pixel and estimate sizes of the noiseless orginal pixed and the noise, repectively. Then, considering the size of the noise, calculate weights of ELA and vertical interpolation. If noises exist after IPC, these could be eliminated by post filtering. The experimental results show that our proposed algorithm has about $1{\sim}2$ dB better performance than those of existing ELA algorithms.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.1153-1154
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• 2008

본 논문에서는 ELA(Edge Line based Average) 알고리즘이 잡음 영상에서 IPC할 때 생기는 문제점을 개선하는 알고리즘을 제안한다. 먼저 잡음을 제거하는 필터링과 동시에 잡음이 없는 원화소의 크기와 잡음의 크기를 추정한다. 이에 따라 잡음의 크기를 고려하여 ELA 방법과 수직보간 방법에 가중치를 주어 보간값을 구한다. 이 후 잡음이 존재할 경우 포스트 필터링(Post Filtering)을 거쳐 잔재해 있는 잡음을 제거해준다. 실험결과 제안하는 알고리즘이 기존 ELA 알고리즘들 보다도 향상된 결과를 보인다.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.120-121
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• 2007

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.