한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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- Pages.288-291
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- 2004
이중 에피층을 가지는 SOI LIGBT의 전기적 특성분석
Analysis of the electrical characteristics of SOI LIGBT with dual-epi layer
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김형우
(한국전기연구원 전력반도체연구그룹) ;
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김상철
(한국전기연구원 전력반도체연구그룹) ;
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김기현
(한국전기연구원 전력반도체연구그룹) ;
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김은동
(한국전기연구원 전력반도체연구그룹)
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Kim, Hyoung-Woo
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Ki-Hyun
(Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
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Kim, Eun-Dong
(Korea Electrotechnology Research Institute, Power Semiconductor Group)
- 발행 : 2004.07.05
초록
Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with