한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
- /
- Pages.227-230
- /
- 2004
In-situ Characterization of Electrochemical and Frictional Behaviors During Copper CMP
- Eom, Dae-Hong (Department of Metallurgy and Materials Engineering, Hanyang University) ;
- Kang, Young-Jae (Department of Metallurgy and Materials Engineering, Hanyang University) ;
-
Park, Jin-Goo
(Department of Metallurgy and Materials Engineering, Hanyang University)
- 발행 : 2004.07.05
초록
As the organic acids were added in the slurry, zeta potential of alumina was changed to negative value and IEP value was shifted from alkaline to acidic pH. In citric acid based slurry, Cu surface continuously dissolved and etching depth linearly increased. On the contrary, passivation layer was grown on Cu surface in oxalic acid based slurry. As the platen rotation speed increased, Preston coefficient decreased in both slurries. With oxalic acid based slurry, at low velocity, removal rate is high value because of high friction force compared to citric acid based slurry. As platen velocity increased, removal of Cu in citric acid based slurry became higher value than oxalic acid based slurry. Typical lubrication behaviors were observed in both slurries. As Sommerfeld number increased, COF values gradually decreased and then re-increased. It indicated that lubrication was changed to direct contact or semi-direct contact mode to hydro-lubrication mode.
키워드