Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication of a FBAR device using a novel process and the effect of bottom electrode on the frequency response

신 공정을 이용한 멤브레인형 체적탄성파 공진기의 제작 및 하부전극이 주파수 응답특성에 미치는 영향

  • Kim, Bo-Hyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Do-Young (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Cho, Dong-Hyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Lee, Jin-Bock (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 김보현 (한양대학교 전자전기제어계측공학과 박막소자연구실) ;
  • 김도영 (한양대학교 전자전기제어계측공학과 박막소자연구실) ;
  • 조동현 (한양대학교 전자전기제어계측공학과 박막소자연구실) ;
  • 이진복 (한양대학교 전자전기제어계측공학과 박막소자연구실) ;
  • 박진석 (한양대학교 전자전기제어계측공학과 박막소자연구실)
  • Published : 2004.07.14
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Abstract

Film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration are fabricated by a novel process. In contrast to the conventional FBAR structure, the newly fabricated resonator doesn't employ any supporting layer below or above it, so that the properties of piezoelectric layer are not influenced by the bottom electrode material. FBAR devices with Mo/AlN/Metal configuration are also fabricated. The frequency response characteristics ($S_{11}$) of the devices fabricated using the proposed process are compared with those of the conventional devices. The return losses are also estimated, in terms of the kind and thickness of bottom electrode materials.

Keywords