PBLG와 PBDG의 상전이와 전기특성에 관한 연구

A Study on the Phase Transfer and Electrical Properties of PBLG and PBDG

  • 김병근 (동신대학교 대학원 전기전자공학과) ;
  • 이경섭 (동신대학교 전기광전자공학부)
  • 발행 : 2003.11.13

초록

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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