한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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- Pages.400-403
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- 2003
PBLG와 PBDG의 상전이와 전기특성에 관한 연구
A Study on the Phase Transfer and Electrical Properties of PBLG and PBDG
- Kim, Beyung-Geun (Dept. of Electrical & Electtronics Eng. Dongshin Univ. grad) ;
- Lee, Kyung-Sup (Dept. of Electrical & optoelectronics Eng. Dongshin Univ)
- 발행 : 2003.11.13
초록
Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.