한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.396-399
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- 2003
Field Limiting Ring termination을 이용한 고전압 4H-SiC pn 다이오드
High-Voltage 4H-SiC pn diode with Field Limiting Ring Termination
초록
4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are