한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.392-395
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- 2003
수직형 직렬 MOSFET 구조의 Emitter Switched Thyristor
An Emitter Switched Thyristor with vertical series MOSFET structure
- Kim, Dae-Won (Korea Univ.) ;
- Kim, Dae-Jong (Korea Univ.) ;
- Sung, Man-Young (Korea Univ.) ;
- Kang, Ey-Goo (KeukDong Univ.)
- 발행 : 2003.07.10
초록
For the first time, the new dual trench gate Emitter Switched Thyristor is proposed for eliminating snap-back effect which leads to a lot of serious problems of device applications. Also, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in the proposed EST structure, allowing higher maximum controllable current densities for ESTs. Moreover, the new dual trench gate allows homogenous current distribution throughout device and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and