한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Chlorine-based 유도결합 플라즈마를 이용한 PST 박막의 건식 식각 특성

Dry etching properties of PST thin films using chlorine-based inductively coupled plasma

  • 김관하 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 이철인 (안산공과대학 전기과) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • 발행 : 2003.07.10
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초록

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

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