한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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- Pages.191-194
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- 2000
비정질 칼코게나이드 As-Ge-Se-S 박막에서 광유기 복굴절 특성
The characteristics of photoinduced birefringence in chalcogenide As-Ge-Se-S thin films
- 장선주 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
- 박종화 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
- 손철호 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
- 여철호 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
- 박정일 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
- 이영종 (여주대학 전자공학과) ;
- 정홍배 (광운대학교 전자,정보통신공학부 전자재료공학과)
- Jang, Sun-Joo (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
- Park, Jong-Hwa (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
- Son, Chul-Ho (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
- Yeo, Cheol-Ho (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
- Park, Jeong-Il (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
- Lee, Young-Jong (Dept. of Electronic Eng., YeoJoo Institute of Technology) ;
- Chung, Hong-Bay (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University)
- 발행 : 2000.04.22
초록
In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB),
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